STD2NK70Z-1

STD2NK70Z-1, Zener-Protected SuperMESH MOSFET, 700V, 6Ω, 1.6A, TO252

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PartNumber:: STD2NK70Z-1

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 07+

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Products Upload time: 2012-11-30

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Product Summary

The STD2NK70Z-1 is an N-channel 700V 6Ω 1.6A DPAK/IPAK Zener-Protected SuperMESH MOSFET. The STD2NK70Z-1 is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmesh products. The applications of the STD2NK70Z-1 include single-ended smps in monitors, computer and industrial application, welding equipment, flyback configuration for battery charger.

Parametrics

STD2NK70Z-1 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 700V; (2)VDGR Drain-gate Voltage (RGS = 20 KΩ): 700V; (3)VGS Gate- source Voltage: ±30V; (4)ID Drain Current (continuous) at TC = 25℃: 1.6 A; (5)ID Drain Current (continuous) at TC = 100℃: 1 A; (6)IDM(*) Drain Current (pulsed): 6.4A; (7)PTOT Total Dissipation at TC = 25℃: 45W; (8)Derating Factor: 0.36 W/℃; (9)VESD(G-S) Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ): 2000 V; (10)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Tstg Storage Temperature: -55 to 150℃; (12)Tj Max. Operating Junction Temperature: -55 to 150℃.

Features

STD2NK70Z-1 features: (1)typical RDS(on) = 6Ω; (2)extremely high dv/dt capability; (3)esd improved capability; (4)100% avalanche tested; (5)new high voltage benchmark; (6)gate charge minimized.