(China (Mainland))
Product Summary
The MRF281SR1 is a RF Power Field effect transistor. The MRF281SR1 is designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
Parametrics
MRF281SR1 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65Vdc; (2)Gate–Source Voltage VGS: ±20Vdc; (3)Total Device Dissipation @ TC = 25℃: 20W; (4)Derate above 25℃: 0.115W/℃; (5)Storage Temperature Range Tstg: –65℃ to +150℃; (6)Operating Junction Temperature TJ: 200℃.
Features
MRF281SR1 features: (1)Specified Two–Tone Performance @ 1930 and 2000MHz, 26 Volts; (2)Capable of Handling 10:1 VSWR, @ 26Vdc, 2000 MHz, 4 Watts CW Output Power; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-signal Impedance Parameters; (5)S-Parameter Characterization at High Bias Levels; (6)Available in Tape and Reel. R1 Suffix = 500 Units per 12mm, 7 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF281SR1 |
|
IC MOSFET RF N-CHAN NI-200S |
Data Sheet |
|
|
||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
|
MRF20030 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MRF20030R |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MRF20060 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MRF20060_1248487 |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MRF20060R |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
MRF20060RS |
Other |
|
Data Sheet |
Negotiable |
|
||||||
