(China (Mainland))
Product Summary
The MG600Q1US41 is a silicon channel IGBT.
Parametrics
MG600Q1US41 absolute maximum ratings: (1)Collector-Emitter Voltage: 1200V; (2)Gate-Emitter Voltage: ±20V; (3)Collector Current DC: 600A; (4)Forward Current DC: 600A; (5)Collector Power Dissipation: 3600W; (6)Junction Temperature: 150℃; (7)Storage Temperature Range: -40℃ to 125℃; (8)Isolation Voltage: 2500V (AC 1 minute).
Features
MG600Q1US41 features: (1)High Input Impedance; (2)High Speed: tf=0.5μs; (3)Low Saturation Voltage: VCE(sat)=4.0V; (4)Enhancement-Mode; (5)Outline: TOSHIBA 2-109E1A; (6)Weight: 590g.
Diagrams
 |
 MG600Q2YS60A |
|
IGBT MOD CMPCT 1200V 600A |
Data Sheet |
Negotiable |
|
||||
|
MG600Q1US61 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG600J2YS61A |
|
IGBT MOD CMPCT DUAL 600V 600A |
Data Sheet |
Negotiable |
|
||||
|
MG600J2YS60A |
Other |
|
Data Sheet |
Negotiable |
|
||||
