K8D6316UBM-DI07

Product Summary

The K8D6316UBM-DI07 is a 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory. It is organized as 8Mx8 or 4M x16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D6316UBM-DI07 consists of two banks. The K8D6316UBM-DI07 is capable of reading data from one bank while programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The device’s fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the standard and industrial temperature ranges.

Parametrics

K8D6316UBM-DI07 absolute maximum ratings: (1)Vcc: -0.5 to +4.0V; (2)A9, OE , RESET VIN: -0.5 to +12.5V; (3)WP/ACC: -0.5 to +12.5V; (4)All Other Pins: -0.5 to +4.0V; (5)Temperature Under Bias Commercial: -10 to +125℃; (6)Industrial: -40 to +125℃; (7)Storage Temperature Tstg: -65 to +150℃; (8)Short Circuit Output Current IOS: 5mA; (9)Operating Temperature TA (Commercial Temp.): 0 to +70℃; (10)TA (Industrial Temp.): -40 to + 85℃.

Features

K8D6316UBM-DI07 features: (1)Single Voltage, 2.7V to 3.6V for Read and Write operations; (2)Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode); (3)Fast Read Access Time : 70ns; (4)Read While Program/Erase Operation; (5)Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb; (6)Secode(Security Code) Block : Extra 64K Byte block; (7)Power Consumption (typical value @5MHz); (8)WP/ACC input pin; (9)Erase Suspend/Resume; (10)Unlock Bypass Program; (11)Hardware RESET Pin; (12)Command Register Operation; (13)Block Group Protection / Unprotection; (14)Supports Common Flash Memory Interface; (15)Industrial Temperature : -40℃ to 85℃; (16)Endurance: 100,000 Program/Erase Cycles Minimum; (17)Data Retention : 10 years.

Diagrams