Product Summary
The K7N163601AQI132 is an 18874368-bits Synchronous Static SRAM. The K7N163601AQI132 is implemented with SAMSUNG’s high performance CMOS technology and is available in 100pin TQFP and 165FBGA packages. Multiple power and ground pins minimize ground bounce.
Parametrics
K7N163601AQI132 absolute maximum ratings: (1)Voltage on VDD Supply Relative to VSS VDD: -0.3 to 4.6 V; (2)Voltage on Any Other Pin Relative to VSS VIN: -0.3 to VDD+0.3 V; (3)Power Dissipation PD: 1.6W; (4)Storage Temperature TSTG: -65 to 150℃; (5)Operating Temperature Commercial TOPR: 0 to 70℃; (6)Industrial TOPR: -40 to 85℃; (7)Storage Temperature Range Under Bias TBIAS: -10 to 85℃.
Features
K7N163601AQI132 features: (1)3.3V+0.165V/-0.165V Power Supply; (2)I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O; (3)Byte Writable Function; (4)Enable clock and suspend operation; (5)Single READ/WRITE control pin; (6)Self-Timed Write Cycle; (7)Three Chip Enable for simple depth expansion with no data contention; (8)A interleaved burst or a linear burst mode; (9)Asynchronous output enable control; (10)Power Down mode; (11)100-TQFP-1420A; (12)165FBGA(11x15 ball aray) with body size of 13mmx15mm; (13)Operating in commeical and industrial temperature range.
Diagrams
K7N161801A |
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K7N161831B |
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K7N163645M |
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Negotiable |
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K7N163631B |
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Negotiable |
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K7N163601A |
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Negotiable |
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K7N161845M |
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Negotiable |
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