(China (Mainland))
Product Summary
The IDT7164L45DB is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low-power stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164L45DB are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT7164L45DB is packaged in a 28-pin 300 mil DIP.
Parametrics
IDT7164L45DB absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND:–0.5 to +7.0V; (2)TA Operating Temperature: 0 to +70℃; (3)TBIAS Temperature Under Bias:–55 to +125℃; (4)TSTG Storage Temperature:–55 to +125℃; (5)PT Power Dissipation: 1.0W; (6)IOUT DC Output Current: 50mA.
Features
IDT7164L45DB features: (1)High-speed address/chip select access time; (2)Military: 20/25/30/35/45/55/70/85ns (max.); (3)Commercial: 15/20/25/35/70ns (max.); (4)Low power consumption; (5)Battery backup operation ?2V data retention voltage (L Version only); (6)Produced with advanced CMOS high-performance technology; (7)Inputs and outputs directly TTL-compatible; (8)Three-state outputs; (9)Available in: 28-pin DIP and SOJ; (10)Military product compliant to MIL-STD-883, Class B.
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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