CY7C245A-35DMB

CY7C245A-35DMB, 2K x 8, electrically programmable read-only memory, DIP, 0.5V to 7.0V, 200mA, 5V ±10%

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Price:: US $13.00~15.00 / piece [Get Latest Price]

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	US $13.00~15.00

PartNumber:: CY7C245A-35DMB

Brand:: Cypress Semiconductor - Cypress | Pack: DIP | D/C: 03+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-11-30

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Part Number:CY7C245A-35DMB
US $13.00 - 15.00
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Product Summary

The CY7C245A-35DMB is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light the PROM is erased and can then be reprogrammed. The memory cells of the CY7C245A-35DMB utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C245A-35DMB replaces bipolar devices and offers the advantages of lower power, reprogrammability, superior performance and high programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current requirements allow gang programming.

Parametrics

CY7C245A-35DMB absolute maximum ratings: (1)Storage Temperature: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -55℃ to +125℃; (3)Supply Voltage to Ground Potential (Pin 24 to Pin 12): 0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State: 0.5V to +7.0V; (5)DC Input Voltage: 3.0V to +7.0V; (6)DC Program Voltage (Pins 7, 18, 20): 13.0V; (7)UV Erasure: 7258 Wsec/cm2; (8)Static Discharge Voltage (per MIL-STD-883, Method 3015): ＞2001V; (9)Latch-up Current: ＞200mA.

Features

CY7C245A-35DMB features: (1)Windowed for reprogrammability; (2)CMOS for optimum speed/power; (3)High speed; (4)15ns address set-up; (5)10ns clock to output; (6)Low power 330mW (commercial) for -25ns; 660mW (military); (7)Programmable synchronous or asynchronous output enable; (8)On-chip edge-triggered registers; (9)Programmable asynchronous register (INIT); (10)EPROM technology, 100% programmable; (11)Slim, 300-mil, 24-pin plastic or hermetic DIP; (12)5V ±10% VCC, commercial and military; (13)TTL-compatible I/O; (14)Direct replacement for bipolar PROMs; (15)Capable of withstanding greater than 2001V static discharge.