(China (Mainland))
Product Summary
The CY7C1049V33-20VC is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. Writing to the CY7C1049V33-20VC is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). The CY7C1049V33-20VC is available in a standard 400-mil-wide 36-pin SOJ package with center power and ground (revolutionary) pinout.
Parametrics
CY7C1049V33-20VC absolute maximum ratings: (1)Storage Temperature:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND:–0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State:–0.5V to VCC + 0.5V; (5)DC Input Voltage:–0.5V to VCC + 0.5V; (6)Current into Outputs (LOW): 20mA; (7)Static Discharge Voltage: ＞2001V (per MIL-STD-883, Method 3015); (8)Latch-Up Current: ＞200 mA.
Features
CY7C1049V33-20VC features: (1)High speed tAA = 15 ns; (2)Low active power 210 mW (max.); (3)Low CMOS standby power (Commercial L version) 2.75 mW (max.); (4)2.0V Data Retention (400μW at 2.0V retention); (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE and OE features.
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