Product Summary

The CY7C1021B-12VC is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. The CY7C1021B-12VC has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable(CE) and Write Enable (WE) inputs LOW. Reading from the CY7C1021B-12VC is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH.

Parametrics

CY7C1021B-12VC absolute maximum ratings: (1)Storage Temperature:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND:–0.5V to +7.0V; (4)DC Voltage Applied to Outputs: in High Z State:–0.5V to VCC+0.5V; (5)DC Input Voltage:–0.5V to VCC+0.5V; (6)Current into Outputs (LOW):20 mA; (7)Static Discharge Voltage:>2001V(per MIL-STD-883, Method 3015); (8)Latch-Up Current:>200 mA.

Features

CY7C1021B-12VC features: (1)Temperature Ranges: Commercial: 0℃ to 70℃, Industrial: –40℃ to 85℃, Automotive: –40℃ to 125℃; (2)High speed: tAA = 10 ns (Commercial & Industrial), tAA = 15 ns (Automotive); (3)CMOS for optimum speed/power; (4)Low active power:825 mW (max.); (5)Automatic power-down when deselected; (6)Independent control of upper and lower bits; (7)Available in 44-pin TSOP II and 400-mil SOJ; (8)Also available in Lead (Pb)-Free 44-pin TSOP II.

Diagrams

CY7C1021B-12VC block diagram

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