Product Summary

The AT28C256-25DM is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28C256-25DM offers access times to 150 ns with power dissipation of just 440mW. When the device is deselected, the CMOS standby current is less than 200mA.

Parametrics

AT28C256-25DM absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground: -0.6V to +13.5V.

Features

AT28C256-25DM features: (1)Fast Read Access Time - 150 ns; (2)Automatic Page Write Operation: Internal Address and Data Latches for 64-Bytes, Internal Control Timer; (3)Fast Write Cycle Times: Page Write Cycle Time: 3 ms or 10 ms Maximum, 1 to 64-Byte Page Write Operation; (4)Low Power Dissipation: 50mA Active Current, 200μA CMOS Standby Current; (5)Hardware and Software Data Protection; (6)DATA Polling for End of Write Detection; (7)High Reliability CMOS Technology.

Diagrams

AT28C256-25DM block diagram

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