(China (Mainland))
Product Summary
The APT20M19JVR is a high voltage N-Channel enhancement mode power MOSFET. The APT20M19JVR minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
Parametrics
APT20M19JVR absolute maximum ratings: (1)Drain-Source Voltage: 200V; (2)Continuous Drain Current @ TC = 25℃: 112 Amps; (3)Pulsed Drain Current: 448 Amps; (4)Gate-Source Voltage Continuous: ±30V; (5)Gate-Source Voltage Transient: ±40V; (6)Total Power Dissipation @ TC = 25℃: 500W; (7)Linear Derating Factor: 4W/℃; (8)Operating and Storage Junction Temperature Range: -55℃ to 150℃; (9)Lead Temperature: 0.063" from Case for 10 Sec.: 300℃; (10)Avalanche Current (Repetitive and Non-Repetitive): 67 Amps; (11)Repetitive Avalanche Energy: 30mJ; (12)Single Pulse Avalanche Energy: 1300mJ.
Features
APT20M19JVR features: (1)Faster Switching; (2)Lower Leakage; (3)100% Avalanche Tested; (4)Popular SOT-227 Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 APT20M19JVR |
|
MOSFET N-CH 200V 112A SOT-227 |
Data Sheet |
Negotiable |
|
||||||||||||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||||||||
 |
APT200GN60B2G |
|
IGBT 600V 283A 682W TO247 |
Data Sheet |
|
|
||||||||||||||||||||||
 |
APT200GN60J |
|
IGBT 600V 283A 682W SOT227 |
Data Sheet |
|
|
||||||||||||||||||||||
|
APT200GN60JDQ4 |
|
IGBT 600V 283A 682W SOT227 |
Data Sheet |
|
|
||||||||||||||||||||||
|
APT200GN60JDQ4G |
|
IGBT 600V 283A 682W SOT227 |
Data Sheet |
Negotiable |
|
||||||||||||||||||||||
|
APT200GN60JG |
|
IGBT 600V 283A 682W SOT227 |
Data Sheet |
Negotiable |
|
||||||||||||||||||||||
 |
APT2012CGCK |
Kingbright |
Standard LED - SMD Green 570nm Water Clear 40mcd |
Data Sheet |
|
|
||||||||||||||||||||||
