(China (Mainland))
Product Summary
The APT50GF120JRD is a high voltage power IGBT. Using Non- Punch Through Technology the Fast IGBT combined with an APT freewheeling ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
Parametrics
APT50GF120JRD absolute maximum ratings: (1)Collector-Emitter Voltage: 1200V; (2)Collector-Gate Voltage (RGE = 20KW): 1200V; (3)Gate-Emitter Voltage: ±20V; (4)Continuous Collector Current @ TC = 25℃: 75A; (5)Continuous Collector Current @ TC = 90℃: 50A; (6)Pulsed Collector Current 1 @ TC = 25℃: 150A; (7)Pulsed Collector Current 1 @ TC = 90℃: 100A; (8)Total Power Dissipation: 460W; (9)Operating and Storage Junction Temperature Range: -55℃ to 150℃; (10)Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.: 300℃
Features
APT50GF120JRD features: (1) Low Forward Voltage Drop; (2) High Freq. Switching to 20KHz; (3) Low Tail Current; (4) Ultra Low Leakage Current; (5)RBSOA and SCSOA Rated; (6)Ultra fast Soft Recovery Antiparallel Diode.
Diagrams
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APT50GF120JRDQ3 |
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IGBT 1200V 120A 521W SOT227 |
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